Reconfigurable Complementary Logic Circuits with Ambipolar Organic Transistors

Ambipolar organic electronics offer great potential for simple and low-cost fabrication of complementary logic circuits on large-area and mechanically flexible substrates. Ambipolar transistors are ideal candidates for the simple and low-cost development of complementary logic circuits since they can operate as n-type and p-type transistors. Nevertheless, the experimental demonstration of ambipolar organic complementary circuits is limited to inverters. The control of the transistor polarity is crucial for proper circuit operation. Novel gating techniques enable to control the transistor polarity but result in dramatically reduced performances. Here we show high-performance non-planar ambipolar organic transistors with electrical control of the polarity and orders of magnitude higher performances with respect to state-of-art split-gate ambipolar transistors. Electrically reconfigurable complementary logic gates based on ambipolar organic transistors are experimentally demonstrated, thus opening up new opportunities for ambipolar organic complementary electronics.115Ysciescopu

Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors

Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film transistors with balanced characteristics. Recent advancements in ambipolar organic transistors in terms of semiconductor and device engineering demonstrate the great potential of this route but, unfortunately, the actual development of ambipolar organic complementary electronics is currently hampered by the uneven electron (n-type) and hole (p-type) conduction in ambipolar organic transistors. Here we show ambipolar organic thin-film transistors with balanced n-type and p-type operation. By manipulating air exposure and vacuum annealing conditions, we show that well-balanced electron and hole transport properties can be easily obtained. The method is used to control hole and electron conductions in split-gate transistors based on a solution-processed donor-acceptor semiconducting polymer. Complementary logic inverters with balanced charging and discharging characteristics are demonstrated. These findings may open up new opportunities for the rational design of complementary electronics based on ambipolar organic transistors. ? 2017 The Author(s).114Ysciescopu

Towards optimal treatment selection for borderline personality disorder patients (BOOTS): a study protocol for a multicenter randomized clinical trial comparing schema therapy and dialectical behavior therapy

Background Specialized evidence-based treatments have been developed and evaluated for borderline personality disorder (BPD), including Dialectical Behavior Therapy (DBT) and Schema Therapy (ST). Individual differences in treatment response to both ST and DBT have been observed across studies, but the factors driving these differences are largely unknown. Understanding which treatment works best for whom and why remain central issues in psychotherapy research. The aim of the present study is to improve treatment response of DBT and ST for BPD patients by a) identifying patient characteristics that predict (differential) treatment response (i.e., treatment selection) and b) understanding how both treatments lead to change (i.e., mechanisms of change). Moreover, the clinical effectiveness and cost-effectiveness of DBT and ST will be evaluated. Methods The BOOTS trial is a multicenter randomized clinical trial conducted in a routine clinical setting in several outpatient clinics in the Netherlands. We aim to recruit 200 participants, to be randomized to DBT or ST. Patients receive a combined program of individual and group sessions for a maximum duration of 25 months. Data are collected at baseline until three-year follow-up. Candidate predictors of (differential) treatment response have been selected based on the literature, a patient representative of the Borderline Foundation of the Netherlands, and semi-structured interviews among 18 expert clinicians. In addition, BPD-treatment-specific (ST: beliefs and schema modes; DBT: emotion regulation and skills use), BPD-treatment-generic (therapeutic environment characterized by genuineness, safety, and equality), and non-specific (attachment and therapeutic alliance) mechanisms of change are assessed. The primary outcome measure is change in BPD manifestations. Secondary outcome measures include functioning, additional self-reported symptoms, and well-being. Discussion The current study contributes to the optimization of treatments for BPD patients by extending our knowledge on “Which treatment – DBT or ST – works the best for which BPD patient, and why?”, which is likely to yield important benefits for both BPD patients (e.g., prevention of overtreatment and potential harm of treatments) and society (e.g., increased economic productivity of patients and efficient use of treatments)

Device model for the operation of polymer/fullerene bulk heterojunction solar cells

We have developed a numerical device model that consistently describes the current-voltage characteristics of polymer:fullerene bulk heterojunction solar cells. Bimolecular recombination and a temperature- and field-dependent generation mechanism of free charges are incorporated. It is demonstrated that in poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-p-phenylene vinylene]- (OC1C10-PPV-) and [6,6]-phenyl C61-butyric acid methyl ester- (PCBM-) (1:4 wt. %) based solar cells space-charge effects only play a minor role, leading to a relatively constant electric field in the device. Furthermore, at short-circuit conditions only 7% of all free carriers are lost due to bimolecular recombination. The model predicts that an increased hole mobility together with a reduction of the acceptor strength of 0.5 eV will lead to a maximum attainable efficiency of 5.5% in the PPV/PCBM-based solar cells.

Process optimization of LIFT through visualization: towards high resolution metal circuit printing

Laser induced forward transfer (LIFT) is a freeform, additive patterning technique capable of depositing high resolution metal structures. A laser pulse is used to generate small droplets from the donor material, defined by the spot size and energy of the pulse. Metallic as well as non-metallic materials can be patterned using this method. Being a contactless, additive and high resolution patterning technique, this method enables fabrication of multi-layer circuits, enabling bridge printing, thereby decreasing component spacing. Here we demonstrate copper droplet formation from a thin film donor. The investigation of the LIFT process is done via shadowgraphy and provides detailed insight on the droplet formation. Of particular importance is the interplay of the droplet jetting mechanism and the spacing between donor and receiving substrate on a stable printing process. Parameters such as the influence of laser fluence and donor thickness on the formation of droplets are discussed. An angle deviation analysis of the copper droplets during flight is carried out to estimate the pointing accuracy of the transfer. The possibility of understanding the droplet formation, could allow for stable droplets transferred with large gaps, simplifying the process for patterning continuous high-resolution conductive lines. © 2014 SPIE

In de voetsporen van Feynman : zelforganiserende moleculen

Op 29 december is bet precies 50 jaar geleden dat Richard Feynman zijn beroemde lezing There is plenty ofroom at the bottom hield tijdens de jaarlijkse conferentie van de American Physical Society. Deze lezing wordt door velen gezien als de start van de nanotechnologie. In zijn voordracht filosofeerde Feynman over de mogelijkheid om machines te maken die op zeer kleine schaal specifieke opdrachten uitvoeren

On the short circuit resilience of organic solar cells: Prediction and validation

The operational characteristics of organic solar cells manufactured with large area processing methods suffers from the occurrence of short-circuits due to defects in the photoactive thin film stack. In this work we study the effect of a shunt resistance on an organic solar cell and demonstrate that device performance is not affected negatively as long as the shunt resistance is higher than approximately 1000 Ohm. By studying charge transport across PEDOT:PSS-lithium fluoride/aluminum (LiF/Al) shunting junctions we show that this prerequisite is already met by applying a sufficiently thick (>1.5 nm) LiF layer. We demonstrate that this remarkable shunt-resilience stems from the formation of a significant charge transport barrier at the PEDOT:PSS-LiF/Al interface. We validate our predictions by fabricating devices with deliberately severed photoactive layers and find an excellent agreement between the calculated and experimental current-voltage characteristics. cop. the Owner Societies 2015